Preizkusite novo različico: COBISS+
 Vzajemna baza podatkov: COBIB.SI - Vzajemna bibliografsko-kataložna baza podatkov (Štev. zapisov: 5.030.873)

Izbrani zapis trajna povezava

AvtorVrtačnik, Danilo
Križaj, Dejan, 1962-
Mali, Tadej
Čašar, B.
Resnik, Drago
Aljančič, Uroš
Možek, Matej
Amon, Slavko
Naslov Influence of radiation on characteristics of FOXFET biased silicon microstrip detector / D. Vrtačnik ... [et al.]
Vrsta/vsebinatype of material prispevek na konferenci
Jezikangleški
Leto2001
Fizični opisStr. 117-122
Opombe9 ref.
BSDOCID108487
Predmetne oznakeSilicon
Materials Testing
Radiation Dosage
Gamma Rays
Hardness Tests
Gama žarki
Materiali, testiranje
Sevanje, doziranje
Silicij
Trdota, testi
PovzetekRadiation hardness of-fabricated FOXFET biased ,silicon microstrip detector has been characterized on gamma irradiation. Basic detector parameters such asleakage current, strip self-bias voltage and dynamic resistance of biasing resistors have been examined. Leakage current deriving from surface and bulk damage has been separated by the use of gated diode structures.
COBISS.SI-ID18206937
Glej publikacijo TI=Proceedings.- Str. 117-122